H1061 ? p mc components pte ltd. , singapore, 2000 triple diffused silicon npn transistor ? designed for low frequency power amplifier maximum ratings characteristic sym bol value unit collector base voltage v cbo 100 v collector emitter voltage v ceo 80 v emitter base voltage v ebo 5 v collector current (dc) i c 4 a collector current (peak) i c 8 a collector power dissipation p c 40 w junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics characteristic symbol test cond ition min. typ. max. unit collector cut off current i cbo v cb = 80v, i e = 0a - - 100 a collector ? emitter breakdown voltage v (br)ceo i c = 50ma, i b = 0a 80 - - v dc current gain h fe v ce = 4v, i c = 1a v ce = 4v, i c = 0.1a 60 35 - - 200 - - - collector emitter saturation voltage v ce(sat) i c = 2a, i b = 0.2a - - 1 v base emitter voltage v be v ce = 4v, i c = 1a - - 1.5 v transition frequency f t v ce = 5v, i c = 0.5a - 10 - mhz collector out put capacitance c ob v cb = 20v, i e = 0a, f=1mhz - 40 - pf classification of h fe rank b c range 60 to 120 100-200 p mc reserves the right to make changes without further notice to any products herein. p mc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does p mc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential damages. the examples of applied circ uits are provided as reference to the reader therefore we shall not undertake any responsibility for the exercise of rights by third parties. high power dissipation medium speed power switching to ? 220ab 1 : base 2 : collector (heat sink) 3 : emitter unit in mm to-220ab wei g ht: 1.9 g
|
